Samsung's archrival becomes first chipmaker to launch 300+ layer TLC NAND flash memory; SK Hynix's 321-layer 1-terabit TLC paves the way for more affordable 100TB+ SSDs

Date:
Thu, 26 Dec 2024 08:47:34 +0000

Description:
SK Hynixs NAND flash race with Samsung intensifies as both companies push technology limits.

FULL STORY ======================================================================SK Hynix's 321-layer NAND targets AI-driven data storage needs 321-layer NAND flash improves data transfer speed by 12% AI storage demands drive innovation in high-capacity NAND solutions

Samsung and SK Hynix have continued their head-to-head battle in the NAND flash memory market with the latter taking the lead with a new launch.

SK Hynix, the worlds second-largest memory chipmaker, recently became the first to mass-produce triple-level cell (TLC) NAND flash with over 300
layers.

The companys new 321-layer, 1-terabit TLC 4D NAND flash, announced recently, is set to revolutionize the data storage industry, paving the way for more affordable ultra-high-capacity solid-state drives ( SSDs ) that exceed 100TB in capacity. SK Hynix 321-layer NAND

The NAND industry is racing to push the limits of data storage technology,
and SK Hynix's achievement is a major milestone.

After the launch of its 238-layer NAND flash last year, SK Hynixs latest 321-layer NAND flash sets a new industry standard. The company plans to
supply these chips to customers starting in the first half of 2025, targeting the booming artificial intelligence ( AI ) market, which demands high-performance, energy-efficient storage solutions.

The 321-layer NAND was made possible by SK Hynixs "Three Plugs" process technology, which involves electrically connecting three plugs through an optimized follow-up step, significantly improving the speed, power
efficiency, and overall performance of the chips.

SK Hynix also developed a low-stress material and introduced technology that automatically corrects alignment among the plugs to further optimize the manufacturing process.

The 321-layer product offers a 12% increase in data transfer speed and a 13% improvement in reading performance relative to the previous 238-layer NAND. Furthermore, it reduces power consumption by over 10%. With a 59% boost in productivity, SK Hynixs new NAND offers an enhanced storage solution for AI data centers and on-device AI applications.

While SK Hynix has achieved this historic feat, its main competitor, Samsung, is not far behind. Samsung is reportedly working on a 400-layer NAND flash chip , which it plans to release by 2026.

The companys roadmap includes developing bonding vertical NAND (BV NAND) technology, which will allow for even greater storage density and minimized heat buildup. Samsungs long-term goal is to introduce NAND chips with over 1,000 layers by 2030, potentially breaking the 200TB storage barrier for AI-driven SSDs.

"SK Hynix is on track to advancing to the Full Stack Al Memory Provider by adding a perfect portfolio in the ultra-high performance NAND space on top of the DRAM business led by HBM," noted Jungdal Choi, Head of NAND Development
at SK Hynix.

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Link to news story: https://www.techradar.com/pro/samsungs-archrival-becomes-first-chipmaker-to-la unch-300-layer-tlc-nand-flash-memory-sk-hynixs-321-layer-1-terabit-tlc-paves-t he-way-for-more-affordable-100tb-ssds


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